Atomic Layer Processing of MoS<sub>2</sub>-Reference-Cited by-同舟云学术

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Atomic Layer Processing of MoS₂

Published:2023-03 Issue: Volume: Page:
ISSN:
Container-title:2023 IEEE Workshop on Microelectronics and Electron Devices (WMED)
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Author:

Jen Wesley¹,Hues John D.¹,Soares Jake¹,Letourneau Steven¹,Lawson Matthew¹,Choudhury Devika²,Mane Anil U.²,Lu Yu¹,Wu Yaqiao¹,Hues Steven M.¹,Li Lan¹,Elam Jeffrey W.²,Graugnard Elton¹

Affiliation:

1. Micron School of Material Science and Engineering, Boise State University,Boise,ID,USA,83725

2. Argonne National Laboratory,Applied Materials Division,Lemont,IL,USA,60439

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10097280/10097431/10097444.pdf?arnumber=10097444

Reference14 articles.

1. First-principles studies of MoF6 absorption on hydroxylated and non-hydroxylated metal oxide surfaces and implications for atomic layer deposition of MoS2

2. Atomic layer deposition of molybdenum disulfide films using MoF6 and H2S

3. Structural Evolution of Molybdenum Disulfide Prepared by Atomic Layer Deposition for Realization of Large Scale Films in Microelectronic Applications

4. Thermal Atomic Layer Etching of MoS2 Using MoF6 and H20;soares;Chem Mater,0

5. Nucleation and growth of molybdenum disulfide grown by thermal atomic layer deposition on metal oxides

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