Self-excitation of Terahertz Plasmons in Graphene FETs Enabled by Transit-time Negative Dynamic Conductance-Reference-Cited by-同舟云学术

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Self-excitation of Terahertz Plasmons in Graphene FETs Enabled by Transit-time Negative Dynamic Conductance

Published:2023-01-24 Issue: Volume: Page:
ISSN:
Container-title:2023 International Conference for Advancement in Technology (ICONAT)
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Author:

Ryzhii Maxim¹,Ryzhii Victor²,Otsuji Taiichi¹,Mitin Vladimir³,Shur Michael S.⁴

Affiliation:

1. University of Aizu,Department of Computer Science and Engineering,Aizu-Wakamatsu,Japan

2. Research Institute of Electrical Communication, Tohoku University,Sendai,Japan

3. University at Buffalo,Department of Electrical Engineering,SUNY Buffalo,New York,USA

4. Rensselaer Polytechnic Institute,Department of Electrical, Computer, and Systems Engineering,Troy,New York,USA

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10079844/10079947/10080743.pdf?arnumber=10080743

Reference23 articles.

1. Reentrance effect in a graphenen−p−njunction coupled to a superconductor

2. Selective transmission of Dirac electrons and ballistic magnetoresistance ofn−pjunctions in graphene

3. Two-Terminal Active Devices for Terahertz Sources

4. Resonant Plasmonic Terahertz Detection in Gated Graphene p - i - n Field-Effect Structures Enabled by Nonlinearity from Zener-Klein Tunneling

5. Tunneling Transistors Based on Graphene and 2-D Crystals

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