A 420 GHz Dual-Tone Phase-Detection-Based Thickness Sensor in 40 nm CMOS Technology
Author:
Affiliation:
1. KU Leuven ESAT/MICAS,Heverlee,Belgium,3001
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9832436/9832437/09832452.pdf?arnumber=9832452
Reference11 articles.
1. A High-Resolution 220-GHz Ultra-Wideband Fully Integrated ISAR Imaging System
2. A 220-to-320-GHz FMCW Radar in 65-nm CMOS Using a Frequency-Comb Architecture
3. A 210–270-GHz Circularly Polarized FMCW Radar With a Single-Lens-Coupled SiGe HBT Chip
4. Correlating internal stresses, electrical activity and defect structure on the micrometer scale in EFG silicon ribbons
5. Fully Integrated Single-Chip 305–375-GHz Transceiver With On-Chip Antennas in SiGe BiCMOS
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