A Fully Integrated 160-Gb/s D-Band Transmitter Achieving 1.1-pJ/b Efficiency in 22-nm FinFET-Reference-Cited by-同舟云学术

A Fully Integrated 160-Gb/s D-Band Transmitter Achieving 1.1-pJ/b Efficiency in 22-nm FinFET

Published:2022-12 Issue:12 Volume:57 Page:3582-3598
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Callender Steven¹^ORCID,Agrawal Abhishek¹^ORCID,Whitcombe Amy²^ORCID,Bhat Ritesh¹^ORCID,Rahman Mustafijur³,Lee Chun C.⁴,Sagazio Peter¹,Dogiamis Georgios C.⁵^ORCID,Carlton Brent R.¹^ORCID,Hull Christopher⁶,Pellerano Stefano¹

Affiliation:

1. Intel Corporation, Hillsboro, OR, USA

2. Intel Corporation, Santa Clara, CA, USA

3. IIT Delhi, New Delhi, India

4. GaN Systems, Richardson, TX, USA

5. Intel Corporation, Chandler, AZ, USA

6. Amazon.com Inc., Redmond, WA, USA

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/9962295/09911788.pdf?arnumber=9911788

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4. Intel 22 nm FinFET (22FFL) process technology for RF and mm wave applications and circuit design optimization for FinFET technology;lee;IEDM Tech Dig,2018

5. A fully integrated 160 Gb/s D-band transmitter with 1.1 pJ/b efficiency in 22 nm FinFET technology;callender;IEEE Int Solid-State Circuits Conf (ISSCC) Dig Tech Papers,2022

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