A 1ynm 1.25V 8Gb 16Gb/s/Pin GDDR6-Based Accelerator-in-Memory Supporting 1TFLOPS MAC Operation and Various Activation Functions for Deep Learning Application-Reference-Cited by-同舟云学术

A 1ynm 1.25V 8Gb 16Gb/s/Pin GDDR6-Based Accelerator-in-Memory Supporting 1TFLOPS MAC Operation and Various Activation Functions for Deep Learning Application

Published:2023-01 Issue:1 Volume:58 Page:291-302
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Kwon Daehan¹^ORCID,Lee Seongju¹,Kim Kyuyoung¹,Oh Sanghoon¹,Park Joonhong¹,Hong Gi-Moon¹,Ka Dongyoon¹,Hwang Kyudong¹^ORCID,Park Jeongje¹,Kang Kyeongpil¹,Kim Jungyeon¹,Jeon Junyeol¹,Kim Nahsung²,Kwon Yongkee²,Kornijcuk Vladimir²,Shin Woojae²,Won Jongsoon²,Lee Minkyu²,Joo Hyunha²,Choi Haerang²,Kim Guhyun²,An Byeongju²,Lee Jaewook²,Ko Donguc¹,Jun Younggun¹,Kim Ilwoong¹,Song Choungki¹,Kim Ilkon²,Park Chanwook²,Kim Seho²,Jeong Chunseok¹,Lim Euicheol²^ORCID,Kim Dongkyun¹,Jang Jieun¹^ORCID,Park Il³,Chun Junhyun²,Cho Joohwan¹

Affiliation:

1. DRAM Development Division, SK Hynix, Icheon, South Korea

2. Solution Development Division, SK Hynix, Seongnam, South Korea

3. GSM Division, SK Hynix, Icheon, South Korea

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/9999561/09882182.pdf?arnumber=9882182

Reference14 articles.

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