A 200-GHz Power Amplifier With 18.7-dBm $P_\text{sat}$ in 45-nm CMOS SOI: A Model-Based Large-Signal Approach on Cascaded Series-Connected Power Amplification-Reference-Cited by-同舟云学术

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A 200-GHz Power Amplifier With 18.7-dBm $P_\text{sat}$ in 45-nm CMOS SOI: A Model-Based Large-Signal Approach on Cascaded Series-Connected Power Amplification

Published:2023 Issue: Volume: Page:1-12
ISSN:0018-9200
Container-title:IEEE Journal of Solid-State Circuits
language:
Short-container-title:IEEE J. Solid-State Circuits

Author:

Hassanzadehyamchi Saleh¹^ORCID,Alizadeh Amirreza²^ORCID,Niknejad Ali M.³^ORCID,Momeni Omeed¹^ORCID

Affiliation:

1. Department of Electrical and Computer Engineering, University of California at Davis, Davis, CA, USA

2. Keysight Technologies, Santa Rosa, CA, USA

3. Department of Electrical Engineering and Computer Sciences, University of California at Berkeley, Berkeley, CA, USA

Funder

NSF

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/4/4359912/10354379.pdf?arnumber=10354379

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A D-Band Power Amplifier With 60-GHz Large-Signal Bandwidth and 7.6% Peak PAE in 28-nm CMOS;IEEE Microwave and Wireless Technology Letters;2024-05

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