On the effects of hydrogen in p-n-p transistors under forward current stress in a C-BiCMOS technology-Reference-Cited by-同舟云学术

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On the effects of hydrogen in p-n-p transistors under forward current stress in a C-BiCMOS technology

Published:1993-01 Issue:1 Volume:14 Page:4-6
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Zhao J.,Li G.P.,Liao K.Y.,Chin M.-R.,Sun J.Y.-C.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx1/55/5617/00215082.pdf?arnumber=215082

Cited by 15 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Temperature Dependent Reliability of Polysilicon Emitter Bipolar Transistors Under High Current Stress;IEEE Transactions on Device and Materials Reliability;2020-09

2. Impact of Electrical Stress on $\gamma$ Ray Irradiated Double Polysilicon Self-Aligned (DPSA) PNP Bipolar Transistors;IEEE Transactions on Device and Materials Reliability;2019-09

3. Carriers’ localization and thermal redistribution in InAlAs/InP grown by MOCVD on (311)A- and (311)B-InP substrates;Applied Physics A;2019-01-29

4. Mixed-mode stress degradation mechanisms in pnp SiGe HBTs;2009 IEEE International Reliability Physics Symposium;2009-04

5. Low-frequency noise in polysilicon-emitter bipolar transistors;IEE Proceedings - Circuits, Devices and Systems;2002-02-01

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