High-power pulsed semiconductor lasers (905 nm) with an ultra-wide aperture (800 µm) based on epitaxially integrated triple heterostructures-Reference-Cited by-同舟云学术

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High-power pulsed semiconductor lasers (905 nm) with an ultra-wide aperture (800 µm) based on epitaxially integrated triple heterostructures

Published:2021-06-21 Issue: Volume: Page:
ISSN:
Container-title:2021 Conference on Lasers and Electro-Optics Europe & European Quantum Electronics Conference (CLEO/Europe-EQEC)
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Author:

Slipchenko Sergey O.,Podoskin Alexander A.,Gavrina Polina S.,Pikhtin Nikita A.,Koplev Petr S.,Bagaev Timur A.,Ladugin Maxim A.,Padalitsa Anatoliy A.,Marmalyuk Alexander A.

Funder

Russian Science Foundation

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9541543/9541265/09541707.pdf?arnumber=9541707

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1. Analyzing technical efficiency in Vietnamese seafood processing firms: A semi-parametric stochastic frontier approach;International Journal of ADVANCED AND APPLIED SCIENCES;2023-02

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