Selective area growth and characterization of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition-Reference-Cited by-同舟云学术

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Selective area growth and characterization of AlGaN/GaN heterojunction bipolar transistors by metalorganic chemical vapor deposition

Published:2001-03 Issue:3 Volume:48 Page:490-494
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Shelton B.S.,Lambert D.J.H.,Jian Jang Huang ,Wong M.M.,Chowdhury U.,Ting Gang Zhu ,Kwon H.K.,Liliental-Weber Z.,Benarama M.,Feng M.,Dupuis R.D.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx5/16/19604/00906441.pdf?arnumber=906441

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3. Demonstration of 1.27 kV Etch-Then-Regrow GaN ${p}$ -${n}$ Junctions With Low Leakage for GaN Power Electronics;IEEE Electron Device Letters;2019-11

4. AlGaN/GaN Heterojunction Bipolar Transistor With Selective-Area Grown Emitter and Improved Base Contact;IEEE Transactions on Electron Devices;2019-03

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