InGaAsP InP current confinement mesa substrate buried heterostructure laser diode fabricated by one-step liquid-phase epitaxy
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Atomic and Molecular Physics, and Optics
Link
http://xplorestaging.ieee.org/ielx5/50/23114/01073634.pdf?arnumber=1073634
Cited by 11 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Impeded phase transition in 1T-TaS2: Thermoelectric fingerprint of long-lived mixed states;Solid State Communications;2020-01
2. Improved High-Temperature and High-Power Characteristics of 1.3-µm Spot-Size Converter Integrated All-Selective Metalorganic Vapor Phase Epitaxy Grown Planar Buried Heterostructure Laser Diodes by Newly Introduced Multiple-Stripe Recombination Layers;Japanese Journal of Applied Physics;1999-02-28
3. Analysis of characteristic temperature for InGaAsP BH lasers with p-n-p-n blocking layers using two-dimensional device simulator;IEEE Journal of Quantum Electronics;1998-07
4. Can liquid-phase epitaxy still be useful for optoelectronic devices?;Materials Science and Engineering: B;1991-07
5. Analysis of facet reflectivity, mirror loss, single-transverse mode condition and beam divergence angle at 1.3 μm and 1.55 μm wavelength of InGaAsP/InP buried heterostructure semiconductor laser diodes;Optics & Laser Technology;1990-02
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