Hybrid Ferroelectric P(VDF-TrFE)/BZT Insulators for Pentacene-Based Nonvolatile Memory Applications
Author:
Affiliation:
1. Department of Electrical Engineering, Institute of Microelectronics, National Cheng-Kung University, Tainan, Taiwan
2. Department of Aviation and Communication Electronics, Air Force Institute of Technology, Kaohsiung, Taiwan
Funder
Ministry of Science and Technology (MOST), Taiwan
Materials Analysis Technology Inc.
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/9866921/09815307.pdf?arnumber=9815307
Reference18 articles.
1. Channel/ferroelectric interface modification in ZnO non-volatile memoryTFT with P(VDF-TrFE)polymer
2. Investigations of enhanced device characteristics in pentacene-based field effect transistors with sol-gel interfacial layer
3. Solution-Processed Barium Zirconate Titanate for Pentacene-Based Thin-Film Transistor and Memory
4. Non-volatile Ferroelectric Poly(vinylidene fluoride-co-trifluoroethylene) Memory Based on a Single-Crystalline Tri-isopropylsilylethynyl Pentacene Field-Effect Transistor
5. In-situX-ray scattering studies of OFET interfaces
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