Temperature Dependence of Intrinsic Channel Mobility in Indium-Gallium-Zinc-Oxide TFTs-Reference-Cited by-同舟云学术

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Temperature Dependence of Intrinsic Channel Mobility in Indium-Gallium-Zinc-Oxide TFTs

Published:2022-08 Issue:8 Volume:43 Page:1259-1262
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Kabir Muhammad S.¹^ORCID,Manley Robert G.²^ORCID,Hirschman Karl D.³^ORCID

Affiliation:

1. Microsystems Engineering Department, Rochester Institute of Technology, Rochester, NY, USA

2. Sullivan Park Science and Technology Center, Corning Inc, Painted Post, NY, USA

3. Electrical and Microelectronic Engineering Department, Rochester Institute of Technology, Rochester, NY, USA

Funder

New York State Empire State Development

Corning Inc

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9841091/09795342.pdf?arnumber=9795342

Reference16 articles.

1. A direct metdoh to extract transient sub-gap density of state (DOS) based on dual gate pulse spectroscopy;dai;Sci Rep,2016

2. Real- and reciprocal-space attributes of band tail states

3. Two-dimensional numerical simulation of radio frequency sputter amorphous In–Ga–Zn–O thin-film transistors

4. Mobility- and temperature-dependent device model for amorphous In–Ga–Zn–O thin-film transistors;abe;Thin Solid Films,2014

5. Device Structure and Passivation Options for the Integration of Scaled IGZO TFTs

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Simultaneous Extraction of Mobility Enhancement Factor and Threshold Voltage With Parasitic Resistances in Amorphous Oxide Semiconductor Thin-Film Transistors;IEEE Transactions on Electron Devices;2023-05

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