Impact of Relaxation on the Performance of GeSe True Random Number Generator Based on Ovonic Threshold Switching-Reference-Cited by-同舟云学术

Impact of Relaxation on the Performance of GeSe True Random Number Generator Based on Ovonic Threshold Switching

Published:2022-07 Issue:7 Volume:43 Page:1061-1064
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Zhou Xue¹^ORCID,Hu Zeyu²^ORCID,Chai Zheng¹^ORCID,Zhang Weidong²^ORCID,Clima Sergiu³^ORCID,Degraeve Robin³^ORCID,Zhang Jian Fu²^ORCID,Fantini Andrea³,Garbin Daniele³^ORCID,Delhougne Romain³,Goux Ludovic³,Kar Gouri Sankar³

Affiliation:

1. State Key Laboratory for Mechanical Behavior of Materials, Center for Spintronics and Quantum Systems, School of Materials Science and Engineering, Xi’an Jiaotong University, Xi’an, China,

2. School of Engineering, Liverpool John Moores University, Liverpool, U.K.

3. imec, Leuven, Belgium

Funder

National Natural Science Foundation of China

Major Key Project of Peng Cheng Laboratory

Engineering and Physical Sciences Research Council (EPSRC), U.K.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9811240/09785965.pdf?arnumber=9785965