Integrated 4H-SiC Photosensors With Active Pixel Sensor-Type Circuits for MGy-Class Radiation Hardened CMOS UV Image Sensor
Author:
Affiliation:
1. Research Institute for Nanodevices, Hiroshima University, Hiroshima, Japan
2. National Institutes for Quantum Science and Technology (QST), Takasaki, Japan
3. National Institute of Advanced Industrial Science and Technology (AIST), Ibaraki, Japan
Funder
Japan Society for the Promotion of Science
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/10001839/09969646.pdf?arnumber=9969646
Reference15 articles.
1. Characterization of 4H-SiC nMOSFETs in Harsh Environments, High-Temperature and High Gamma-Ray Radiation
2. High Gamma Ray Tolerance for 4H-SiC Bipolar Circuits
3. Quantified Temperature Effect in a CMOS Image Sensor
4. A Silicon Carbide 256 Pixel UV Image Sensor Array Operating at 400 °C
5. Bandgap Dependence and Related Features of Radiation Ionization Energies in Semiconductors
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. 4H-SiC 64 pixels CMOS image sensors with 3T/4T-APS arrays;Applied Physics Express;2024-08-01
2. Leakage Performance of 4H-SiC CMOS Logic Circuits After Gamma Irradiation;IEEE Electron Device Letters;2024-04
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