Characteristics of Epitaxial Graphene on SiC/Si Substrates in the Radio Frequency Spectrum-Reference-Cited by-同舟云学术

Characteristics of Epitaxial Graphene on SiC/Si Substrates in the Radio Frequency Spectrum

Published:2023-02 Issue:2 Volume:44 Page:297-300
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Katzmarek David A.¹^ORCID,Yang Yang²^ORCID,Ghasemian Mohammad B.³^ORCID,Kalantar-Zadeh Kourosh³^ORCID,Ziolkowski Richard W.²^ORCID,Iacopi Francesca¹^ORCID

Affiliation:

1. ARC Centre of Excellence TMOS, Faculty of Engineering and IT, University of Technology Sydney, Sydney, NSW, Australia

2. Faculty of Engineering and IT, University of Technology Sydney, Sydney, NSW, Australia

3. Faculty of Engineering, University of New South Wales, Sydney, NSW, Australia

Funder

Australian Research Council through the Centre of Excellence in Transformative Meta-Optical Systems

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/10027614/09991963.pdf?arnumber=9991963

Reference18 articles.

1. 110 GHz measurement of large-area graphene integrated in low-loss microwave structures

2. Transport conductivity of graphene at RF and microwave frequencies

3. S-parameter-based IC interconnect transmission line characterization

4. Edge contacts of graphene formed by using a controlled plasma treatment

5. Intrinsic characteristics of transmission line of graphenes at microwave frequencies

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