Preparation and Characterization of BaTiO3/Nb: SrTiO3/La0.65 Sr0.35 MnO3Heterostructure Ferroelectric Thin Films

Author:

Peng Yiming1,Wei Chunshu1,Li Haiou1,Zhang Yongjie1,Liu Xingpeng1

Affiliation:

1. Application Guilin University of Electronic Technology,Guangxi Key Laboratory of Precision Navigation Technology,China

Publisher

IEEE

Reference13 articles.

1. The Role of Ferroelectric Polarization in Resistive Memory Properties of Metal/Insulator/Semiconductor Tunnel Junctions: A Comparative Study

2. Effect of a semiconductor electrode on the tunneling electroresistance in ferroelectric tunneling junction

3. Ferroelectric memristor based on Pt/BiFeO3/Nb-doped SrTiO3 heterostructure;Zhongqiang;Applied Physics Letters,2013

4. BiFeO3-Based Flexible Ferroelectric Memristors for Neuromorphic Pattern Recognition

5. Thermally stable and radiation hard ferroelectric Hf0. 5Zr0. 502 thin films on muscovite mica for flexible nonvolatile memory applications;Wenwu;ACS Applied Electronic Materials,2019

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