Highly Reliable Nanoelectrothermal Non-Volatile Memory with CMOS-level Voltage and Low On-State Resistance
Author:
Affiliation:
1. Korea Advanced Institute of Science and Technology (KAIST),School of Electrical Engineering,Daejeon,Republic of Korea
2. National NanoFab Center (NNFC),Daejeon,Republic of Korea
Funder
National Research Foundation of Korea
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10439241/10439292/10439351.pdf?arnumber=10439351
Reference13 articles.
1. Nanoelectromechanical contact switches
2. A sub-1-volt nanoelectromechanical switching device
3. Nano-electromechanical Switch Based on a Physical Unclonable Function for Highly Robust and Stable Performance in Harsh Environments
4. A Bistable Electrostatic Silicon Nanofin Relay for Nonvolatile Memory Application
5. Back-End-of-Line Nano-Electro-Mechanical Switches for Reconfigurable Interconnects
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