Electrothermal Ruggedness of High Voltage SiC Merged-PiN-Schottky Diodes Under Inductive Avalanche & Surge Current Stress-Reference-Cited by-同舟云学术

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Electrothermal Ruggedness of High Voltage SiC Merged-PiN-Schottky Diodes Under Inductive Avalanche & Surge Current Stress

Published:2022-10-09 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE Energy Conversion Congress and Exposition (ECCE)
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Author:

Shen Chengjun¹,Jahdi Saeed¹,Yang Juefei¹,Alatise Olayiwola²,Ortiz-Gonzalez Jose²,Mellor Phil¹

Affiliation:

1. School of Electrical Engineering University of Bristol,UK,BS8 1UB

2. School of Electrical Engineering University of Warwick,UK,CV4 7AL

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9947299/9947300/09948045.pdf?arnumber=9948045

Reference28 articles.

1. Avalanche behaviour and its temperature dependence of commercial SiC MPS diodes: Influence of design and voltage class

2. Avalanche Robustness of SiC MPS Diodes;basler;PCIM europe International Exhibition and Conference for Power Electronics,0

3. Investigation of the avalanche ruggedness of SiC MPS diodes under repetitive unclamped-inductive-switching stress

4. UIS performance and ruggedness of stand-alone and cascode SiC JFETs

5. Improved Electrothermal Ruggedness in SiC MOSFETs Compared With Silicon IGBTs

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