Temperature dependence of single-event burnout in n-channel power MOSFETs (for space application)-Reference-Cited by-同舟云学术

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Temperature dependence of single-event burnout in n-channel power MOSFETs (for space application)

Published:1992-12 Issue:6 Volume:39 Page:1605-1612
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Johnson G.H.,Schrimpf R.D.,Galloway K.F.,Koga R.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx1/23/5513/00211342.pdf?arnumber=211342

Cited by 45 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

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2. Machine learning based prediction model for single event burnout hardening design of power MOSFETs;Microelectronics Journal;2023-09

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5. Methods of catastrophic failure prevention during the SEL-sensitivity estimation of IC;2022 Moscow Workshop on Electronic and Networking Technologies (MWENT);2022-06-09

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