Wide-Range Frequency-Agile Microwave Generation up to 10 GHz Based on Vanadium-Compensated 4H-SiC Photoconductive Semiconductor Switch
Author:
Affiliation:
1. College of Advanced Interdisciplinary Studies, National University of Defense Technology, Changsha, China
Funder
National Natural Science Foundation of China
Natural Science Foundation of Hunan Province
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/55/9811240/09785799.pdf?arnumber=9785799
Reference21 articles.
1. Initial Test of Optoelectronic High Power Microwave Generation From 6H-SiC Photoconductive Switch
2. Effects of High-Field Velocity Saturation on the Performance of V-Doped 6H Silicon-Carbide Photoconductive Switches
3. MHz Repetition Frequency, Hundreds Kilowatt, and Sub-Nanosecond Agile Pulse Generation Based on Linear 4H-SiC Photoconductive Semiconductor
4. Photoconductive Switch with High Sub-Bandgap Responsivity in Nitrogen-Doped Diamond
5. A New Method of Accurately Measuring Photoconductive Performance of 4H-SiC Photoconductive Switches
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1. Effect of Donor–Acceptor Compensation on Transient Performance of Vanadium-Doped SiC Photoconductive Switches Using 532-nm Laser;IEEE Transactions on Electron Devices;2024-07
2. A Backward-Triggered 4H-SiC Photoconductive Semiconductor Switch With Planar Electrode Structure;IEEE Transactions on Electron Devices;2024-07
3. Dual-Stacked SiC Vertical Photoconductive Switch for Modulation Bandwidth Extension of Frequency-Agile Power Microwave;IEEE Electron Device Letters;2024-06
4. Effect of Beam Profiles on Photoelectric Efficiency of Side-Illuminated HPSI 4H-SiC PCSS;IEEE Photonics Technology Letters;2024-06-01
5. Influence of Nitrogen Doping in Vanadium- Compensated 4H-SiC on Transient Photocurrent Response for Photoconductive Microwave Generation;IEEE Photonics Technology Letters;2024-04-15
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