Capacitance-Dependent V<sub>TH</sub> Instability Under a High dV<sub>g</sub>/dt Event in p-GaN Power HEMTs-Reference-Cited by-同舟云学术

Capacitance-Dependent V_TH Instability Under a High dV_g/dt Event in p-GaN Power HEMTs

Published:2022-10 Issue:10 Volume:43 Page:1617-1620
ISSN:0741-3106
Container-title:IEEE Electron Device Letters
language:
Short-container-title:IEEE Electron Device Lett.

Author:

Tang Shun-Wei¹,Lin Wei-Syuan¹,Huang Zhen-Hong¹,Wu Tian-Li¹^ORCID

Affiliation:

1. International College of Semiconductor Technology, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/55/9903996/09869622.pdf?arnumber=9869622

Reference12 articles.

1. 650 V GaN based 3.3kW bi-directional DC–DC converter for high efficiency battery charger with wide battery voltage range;qi;Proc IEEE Appl Power Electron Conf Expo (APEC),2019

2. Stability of wireless power transfer using gamma-ray irradiated GaN power HEMTs

3. Observation of Dynamic V TH of p-GaN Gate HEMTs by Fast Sweeping Characterization

4. GaN-on-Si Power Technology: Devices and Applications

5. Gate stress induced threshold voltage instability and its significance for reliable threshold voltage measurement in p-GaN HEMT

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Physical Modeling of Threshold Voltage Instability in GaN High‐Electron‐Mobility Transistors;physica status solidi (a);2024-07-03

2. Physical insight into the abnormal VTH instability of Schottky p-GaN HEMTs under high-frequency operation;Applied Physics Letters;2024-04-22

3. Comparative Investigation on the Repetitive Short-Circuit Capability of 100 V Commercial p-GaN Gate Power HEMTs With Different Processing and Structure;IEEE Transactions on Electron Devices;2024-04

4. Research on the Reliability of Threshold Voltage Based on GaN High-Electron-Mobility Transistors;Micromachines;2024-02-25

5. Trap characterization of GaN High-electron-mobility Transistors Based on the Transient Drain Voltage;Journal of Physics: Conference Series;2023-06-01