An Isolation-Improved Asymmetric T/R Switch with Two-Stage Networks in GaAs pHEMT for 5G NR FR2 n259 Band
Author:
Affiliation:
1. National Central University,Department of Electrical Engineering,Jhongli, Taoyuan,Taiwan,32001
Funder
Qualcomm
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10315246/10315146/10315358.pdf?arnumber=10315358
Reference4 articles.
1. A 25–30-GHz Asymmetric SPDT Switch for 5G Applications in 65-nm Triple-Well CMOS
2. An asymmetrical 60–90 GHz single-pole double throw switch MMIC;dyskin;Proc Eur Microw Integr Circuits Conf,2013
3. A Fully Integrated Ultra-Low Insertion Loss T/R Switch for 802.11b/g/n Application in 90 nm CMOS Process
4. Integrated CMOS transmit-receive switch using LC-tuned substrate bias for 2.4-GHz and 5.2-GHz applications
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