3.3 kV 4H-SiC MOSFET with embeded hetero junction body diode for low switching loss-Reference-Cited by-同舟云学术

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3.3 kV 4H-SiC MOSFET with embeded hetero junction body diode for low switching loss

Published:2022-02-06 Issue: Volume: Page:
ISSN:
Container-title:2022 International Conference on Electronics, Information, and Communication (ICEIC)
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Author:

Na Jaeyeop¹,Kim Kwansoo¹

Affiliation:

1. Sogang University,Department of Electronic Engineering,Seoul,Korea

Funder

Korea Institute for Advancement of Technology (KIAT)

Korea Government (MOTIE)

ITRC (Information Technology Research Center)

IITP (Institute for Information & communications Technology Promotion)

IDEC (IC Design Education Center)

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9748174/9748152/09748589.pdf?arnumber=9748589

Reference15 articles.

1. High Performance of Polysilicon/4H-SiC Dual-Heterojunction Trench Diode

2. Design and Optimization of SiC Super-Junction MOSFET Using Vertical Variation Doping Profile

3. 4H-SiC Double Trench MOSFET with Split Heterojunction Gate for Improving Switching Characteristics

4. Reverse recovery characteristics of high power thyristors in HVDC converter valve

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Novel Asymmetric Trench SiC Metal–Oxide–Semiconductor Field-Effect Transistor with a Poly-Si/SiC Heterojunction Diode for Optimizing Reverse Conduction Performance;Micromachines;2024-03-29

2. A Novel Asymmetric Trench SiC MOSFET With an Integrated JFET for Improved Reverse Conduction Performance;IEEE Transactions on Electron Devices;2023

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