Effect of Deep N-Well Bias in an 850-nm Si Photodiode Fabricated Using the CMOS Process-Reference-Cited by-同舟云学术

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Effect of Deep N-Well Bias in an 850-nm Si Photodiode Fabricated Using the CMOS Process

Published:2013-04 Issue:7 Volume:25 Page:659-662
ISSN:1041-1135
Container-title:IEEE Photonics Technology Letters
language:
Short-container-title:IEEE Photon. Technol. Lett.

Author:

Chou Fang-Ping,Wang Ching-Wen,Li Zi-Ying,Hsieh Yu-Chen,Hsin Yue-Ming

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/68/6478805/06469164.pdf?arnumber=6469164

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low breakdown voltage and CMOS compatible avalanche photodiode based on SOI substrate;Optics Letters;2024-07-23

2. A Near-Infrared Enhanced Field-Line Crowding Based CMOS-Integrated Avalanche Photodiode;IEEE Photonics Journal;2023-06

3. Area and Bandwidth Enhancement of an n+/p-Well Dot Avalanche Photodiode in 0.35 μm CMOS Technology;Sensors;2023-03-23

4. A Pixelated Monolithic CMOS PPG Sensor for Spatial Feature Acquisition;IEEE Journal of Solid-State Circuits;2023-03

5. Zero-Process-Change SiGe Heterojunction Avalanche Photodiode for High-Speed, High-Gain Detection Near the Silicon Band Edge;IEEE Electron Device Letters;2021-09

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