A new nonlinear relaxation scheme for solving semiconductor device equations

Author:

Bach K.H.,Dirks H.K.,Meinerzhagen B.,Engl W.L.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Computer Graphics and Computer-Aided Design,Software

Cited by 8 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. DC and Transient Microscopic Simulation of Nanowire NMOSFETs;2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM);2023-03-07

2. Spherical Harmonics Expansion and Multi-Scale Modeling;Springer Handbook of Semiconductor Devices;2022-11-11

3. Almost Newton method for large flux steady-state of 1D Poisson–Nernst–Planck equations;Journal of Computational and Applied Mathematics;2005-11

4. Hierarchical 2-D DD and HD noise simulations of Si and SiGe devices. I. Theory;IEEE Transactions on Electron Devices;2002-07

5. IS PHYSICALLY SOUND AND PREDICTIVE MODELING OF NMOS SUBSTRATE CURRENTS POSSIBLE?;Solid-State Electronics;1998-04

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