High efficiency multi-mode outphasing RF power amplifier in 45nm CMOS-Reference-Cited by-同舟云学术

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High efficiency multi-mode outphasing RF power amplifier in 45nm CMOS

Published:2015-09 Issue: Volume: Page:
ISSN:
Container-title:ESSCIRC Conference 2015 - 41st European Solid-State Circuits Conference (ESSCIRC)
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Author:

Banerjee Aritra,Ding Lei,Hezar Rahmi

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/7300343/7313811/07313855.pdf?arnumber=7313855

Cited by 12 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Fully Integrated 28-GHz-Band GaN HEMT Outphasing Amplifier Designed by Considering Insertion Loss at Dual-Power-Level Optimization;2023 Asia-Pacific Microwave Conference (APMC);2023-12-05

2. Asymmetrical Load Modulated Balanced Amplifier With Continuum of Modulation Ratio and Dual-Octave Bandwidth;IEEE Transactions on Microwave Theory and Techniques;2021-01

3. Pseudo-Doherty Load-Modulated Balanced Amplifier With Wide Bandwidth and Extended Power Back-Off Range;IEEE Transactions on Microwave Theory and Techniques;2020-07

4. Placement and Quantitating of FACTS Devices in a Power System Including the Wind Unit to Enhance System Parameters;Tehnički glasnik;2020-06-11

5. A Class-D Tri-Phasing CMOS Power Amplifier With an Extended Marchand-Balun Power Combiner;IEEE Transactions on Microwave Theory and Techniques;2020-03

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