Author:
Chowdhary Chetan C,Sreelakshmi K
Cited by
5 articles.
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1. Performance Characteristics of S-Band GaN HEMT-based RF Power Amplifier Implemented on DC Bias Limitation;2024 International Conference on Integrated Circuits and Communication Systems (ICICACS);2024-02-23
2. A 2.4 GHz High Efficient Power Amplifier Using Harmonic Suppression Method for RF Transceiver Applications;2023 Asia Meeting on Environment and Electrical Engineering (EEE-AM);2023-11-13
3. Highly Efficient GaN Doherty Power Amplifier for N78 Sub-6 GHz Band 5G Applications;Electronics;2023-09-22
4. Design and Analysis of Wide-band Doherty Main Power Amplifier;2023 International Conference on Recent Advances in Electrical, Electronics, Ubiquitous Communication, and Computational Intelligence (RAEEUCCI);2023-04-19
5. Design of GaN HEMT based Doherty Power Amplifier for 5G Applications;2021 IEEE International Conference on Mobile Networks and Wireless Communications (ICMNWC);2021-12-03