GaN-on-Si mm-wave RF Devices Integrated in a 200mm CMOS Compatible 3-Level Cu BEOL
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Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9371868/9371888/09372056.pdf?arnumber=9372056
Cited by 16 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献
1. Effect of Buffer Charge Redistribution on RF Losses and Harmonic Distortion in GaN-on-Si Substrates;IEEE Journal of the Electron Devices Society;2024
2. Analysis of the Gate Current’s Influence on the RF Power Performance of InAlN/GaN HEMTs;IEEE Transactions on Microwave Theory and Techniques;2024
3. Solutions To Improve HBM ESD Robustness of GaN RF HEMTs;2023 45th Annual EOS/ESD Symposium (EOS/ESD);2023-10-02
4. ON-State Human Body Model ESD Failure Mechanisms in GaN-on-Si RF MIS-HEMTs;IEEE Electron Device Letters;2023-08
5. Characteristics Comparison of Nanochannel GaN-on-Si and GaN-on-SiC HEMTs;ECS Journal of Solid State Science and Technology;2023-07-01
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