Finite element simulation of Cu-SiO<sub>2</sub> direct hybrid bonding: impact of via on bonding integration-Reference-Cited by-同舟云学术

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Finite element simulation of Cu-SiO₂ direct hybrid bonding: impact of via on bonding integration

Published:2023-12-05 Issue: Volume: Page:359-364
ISSN:
Container-title:2023 IEEE 25th Electronics Packaging Technology Conference (EPTC)
language:
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Author:

Zhao Guoqiang¹,Wang Wenzhi²,Zhang Huimin³,Zhang Nan³,Zhou Xiaofeng³,Zhao Yi¹

Affiliation:

1. Zhejiang University,College of Information Science and Electronic Engineering,Hangzhou,China,310027

2. China Nanhu Academy of Electronics and Information Technology,Jiaxing,China,314001

3. East China Normal University,School of Integrated Circuits,Shanghai,China,200241

Funder

National Key Research and Development Program of China

Technology Development

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10457288/10457581/10457874.pdf?arnumber=10457874

Reference16 articles.

1. Modelling and characterization on wafer to wafer hybrid bonding technology for 3D IC packaging

2. Bonding integrity enhancement in wafer to wafer fine pitch hybrid bonding by advanced numerical modelling

3. Wafer-to-Wafer Hybrid Bonding Development by Advanced Finite Element Modeling for 3-D IC Packages

4. Cu/SiO2 hybrid bonding: Finite element modeling and experimental characterization

5. Numerical and experimental investigations on the hybrid bonding of Cu/SiÜ2 patterned surfaces using a cohesive model

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