Dark Current Analysis in Type-II InAs/GaSb Superlattice LWIR Detector with M-structure Barrier
Author:
Affiliation:
1. Beijing University of Posts and Telecommunications,State Key Laboratory of Information Photonics and Optical Communications,Beijing,China,100876
2. Southwest Institute of Technical Physics,Chengdu,China,610041
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/10050881/10050884/10051059.pdf?arnumber=10051059
Reference20 articles.
1. Band edge tunability of M-structure for heterojunction design in Sb based type II superlattice photodiodes
2. Dark current suppression in type II InAs∕GaSb superlattice long wavelength infrared photodiodes with M-structure barrier
3. A high-performance long wavelength superlattice complementary barrier infrared detector
4. Anti- monide-based barrier infrared detectors;ting;Proc SPIE 7660 76601R-1-12,2010
5. Status and application of HgCdTe device modeling
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