Study on Lifetime Modeling of IGBT Modules Considering Electric Frequency Influence Mechanism-Reference-Cited by-同舟云学术

登录注册会员服务联系我们

Study on Lifetime Modeling of IGBT Modules Considering Electric Frequency Influence Mechanism

Published:2023-09 Issue:3 Volume:23 Page:395-403
ISSN:1530-4388
Container-title:IEEE Transactions on Device and Materials Reliability
language:
Short-container-title:IEEE Trans. Device Mater. Relib.

Author:

Lai Wei¹^ORCID,Liu Anbin²,Wang Zhi²,Shangguan Miaomiao²,Li Hui¹^ORCID,Chen Minyou¹^ORCID,Yao Ran¹^ORCID,Xiong Yan³

Affiliation:

1. State Key Laboratory of Transmission and Distribution Equipment and System Security and New Technology, Chongqing University, Chongqing, China

2. School of Electrical Engineering, Chongqing University, Chongqing, China

3. China Southern Power Grid Scientific Research Institute, CSG Electric Power Research Institute Company Ltd., Guangzhou, China

Funder

National Natural Science Foundation of China - State Grid Corporation Joint Fund for Smart Grid

Fundamental Research Funds for the Central Universities

National Natural Science Foundation of China

Science and Technology Project Funding of China Southern Power Grid Corporation

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Safety, Risk, Reliability and Quality,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/7298/10242179/10159550.pdf?arnumber=10159550

Reference25 articles.

1. Long-Term Reliability Evaluation of Power Modules With Low Amplitude Thermomechanical Stresses and Initial Defects

2. Thermo-mechanical analysis of bonding wires in IGBT modules under operating conditions

3. Impact of load pulse duration on power cycling lifetime of chip interconnection solder joints

4. Effect of load sequence interaction on bond-wire lifetime due to power cycling

5. Characterization of high-voltage IGBT module degradations under PWM power cycling test at high ambient temperature

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Power Cycling Modeling and Lifetime Evaluation of SiC Power MOSFET Module Using a Modified Physical Lifetime Model;IEEE Transactions on Device and Materials Reliability;2024-03

同舟云学术

1.学者识别学者识别

2.学术分析学术分析

3.人才评估人才评估

"同舟云学术"是以全球学者为主线，采集、加工和组织学术论文而形成的新型学术文献查询和分析系统，可以对全球学者进行文献检索和人才价值评估。用户可以通过关注某些学科领域的顶尖人物而持续追踪该领域的学科进展和研究前沿。经过近期的数据扩容，当前同舟云学术共收录了国内外主流学术期刊6万余种，收集的期刊论文及会议论文总量共计约1.5亿篇，并以每天添加12000余篇中外论文的速度递增。我们也可以为用户提供个性化、定制化的学者数据。欢迎来电咨询！咨询电话：010-8811{复制后删除}0370

www.globalauthorid.com

TOP

Copyright © 2019-2024 北京同舟云网络信息技术有限公司
京公网安备11010802033243号京ICP备18003416号-3