Utilizing Two Three-Transistor Structures for Designing Radiation Hardened Circuits-Reference-Cited by-同舟云学术

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Utilizing Two Three-Transistor Structures for Designing Radiation Hardened Circuits

Published:2023 Issue: Volume: Page:1-1
ISSN:1530-4388
Container-title:IEEE Transactions on Device and Materials Reliability
language:
Short-container-title:IEEE Trans. Device Mater. Relib.

Author:

Liu Xin¹^ORCID,Chen JiaXin²,Liu Yinyu¹,Gu Ke¹,Wang Siqi¹,Bu Jianhui²^ORCID,Zhou Quanfeng¹

Affiliation:

1. Microsystem and Terahertz Research Center, China Academy of Engineering Physics and Insititute of Electronic Engineering, China Academy of Engineering Physics, Chengdu, China

2. Institute of Microeletronics, Chinese Academy of Science, Beijing, China

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Safety, Risk, Reliability and Quality,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/7298/4358683/10366820.pdf?arnumber=10366820

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