Extracting Total Ionizing Dose Threshold Voltage Shifts From Ring Oscillator Circuit Response-Reference-Cited by-同舟云学术

Extracting Total Ionizing Dose Threshold Voltage Shifts From Ring Oscillator Circuit Response

Published:2023-03 Issue:1 Volume:23 Page:162-171
ISSN:1530-4388
Container-title:IEEE Transactions on Device and Materials Reliability
language:
Short-container-title:IEEE Trans. Device Mater. Relib.

Author:

Clark Lawrence T.¹^ORCID,Young-Sciortino Clifford S.²^ORCID,Guertin Steven M.³,Brown William E⁴^ORCID,Holbert Keith E⁵^ORCID,Bikkina Phaneendra⁶^ORCID,Bhanushali Sumukh¹,Levy Andrew¹,Turowski Marek¹^ORCID,Butler Jim D.³

Affiliation:

1. LTC Design LLC, Phoeinx, AZ, USA

2. Jet Propulsion Laboratory, Pasadena, CA, USA

3. Jet Propulsion Laboratory, California Institute of Technology, Pasadena, CA, USA

4. Ellutions LLC, Chandler, AZ, USA

5. ECEE Department, Arizona State University, Tempe, AZ, USA

6. Alphacore Inc., Tempe, AZ, USA

Funder

Jet Propulsion Laboratory, California Institute of Technology, through the National Aeronautics and Space Administration

NASA Space Technology Mission Directorate

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Safety, Risk, Reliability and Quality,Electronic, Optical and Magnetic Materials

Link

http://xplorestaging.ieee.org/ielx7/7298/10063987/10042169.pdf?arnumber=10042169

Reference33 articles.

1. The impact and implication of BTI/HCI decoupling on ring oscillator

2. Total-dose radiation hardness assurance

3. The impact of inverter-like transitions on device TDDB and ring oscillators

4. Total Ionizing Dose Effect on Ring Oscillator Frequency in 28-nm FD-SOI Technology

5. 22nm FDSOI technology for emerging mobile, Internet-of-Things, and RF applications;carter;Proc IEDM,2016

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Impact of TID Irradiation on Static Noise Margin of 22 nm UTBB FD-SOI 6-T SRAM Cells;IEEE Transactions on Nuclear Science;2024-03