An Empirical Study on Fault Detection and Root Cause Analysis of Indium Tin Oxide Electrodes by Processing S-Parameter Patterns-Reference-Cited by-同舟云学术

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An Empirical Study on Fault Detection and Root Cause Analysis of Indium Tin Oxide Electrodes by Processing S-Parameter Patterns

Published:2024-09 Issue:3 Volume:24 Page:380-389
ISSN:1530-4388
Container-title:IEEE Transactions on Device and Materials Reliability
language:
Short-container-title:IEEE Trans. Device Mater. Relib.

Author:

Kang Tae Yeob¹^ORCID,Lee Haebom²^ORCID,Suh Sungho³^ORCID

Affiliation:

1. Department of Mechanical Engineering, The University of Suwon, Hwaseong, South Korea

2. Department of Computer Science, Heidelberg University, Heidelberg, Germany

3. Embedded Intelligence, German Research Center for Artificial Intelligence (DFKI), Kaiserslautern, Germany

Funder

University of Suwon, Republic of Korea, in 2023

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/7298/10667659/10559267.pdf?arnumber=10559267

Reference42 articles.

1. Recent progress in transparent oxide semiconductors: Materials and device application

2. Recent Advances in Stretchable and Transparent Electronic Materials

3. Mechanical Properties of Tensile Cracking in Indium Tin Oxide Films on Polycarbonate Substrates

4. The key of ITO films with high transparency and conductivity: Grain size and surface chemical composition

5. Photo-degradation of the indium tin oxide (ITO)/organic interface in organic optoelectronic devices and a new outlook on the role of ITO surface treatments and interfacial layers in improving device stability

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