A Driver Amplifier with Configurable Transformer-Based Matching Networks in 65-nm CMOS-Reference-Cited by-同舟云学术

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A Driver Amplifier with Configurable Transformer-Based Matching Networks in 65-nm CMOS

Published:2023-10-24 Issue: Volume: Page:1-4
ISSN:
Container-title:2023 IEEE 15th International Conference on ASIC (ASICON)
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Author:

Li Hangbiao¹,Zhang Ran¹,Zhang Kai¹,Zhao Xiaodong¹,Liu Zhiqing¹,Liu Shuai¹

Affiliation:

1. Southwest China Institute of Electronics Technology,Chengdu,China,610036

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/10395907/10395930/10396206.pdf?arnumber=10396206

Reference15 articles.

1. A 32.9% PAE, 15.3 dBm, 21.6–41.6 GHz power amplifier in 65nm CMOS using coupled resonators

2. On the Design of Wideband Transformer-Based Fourth Order Matching Networks for ${E}$ -Band Receivers in 28-nm CMOS

3. A 40 GHz to 67 GHz bandwidth 23 dB gain 5.8 dB maximum NF mm-wave LNA in 28 nm CMOS;Hadipour

4. A Wideband Receiver for Multi-Gbit/s Communications in 65 nm CMOS

5. A 1.2-V 5.2-mW 20–30-GHz Wideband Receiver Front-End in 0.18-$\mu{\hbox {m}}$ CMOS

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