A D-Band Variable Gain Low Noise Amplifier in a 28-nm CMOS Process for 6G Wireless Communications-Reference-Cited by-同舟云学术

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A D-Band Variable Gain Low Noise Amplifier in a 28-nm CMOS Process for 6G Wireless Communications

Published:2024-01 Issue:1 Volume:71 Page:131-135
ISSN:1549-7747
Container-title:IEEE Transactions on Circuits and Systems II: Express Briefs
language:
Short-container-title:IEEE Trans. Circuits Syst. II

Author:

Lee Chae Jun¹^ORCID,Nam Hyohyun¹^ORCID,Kim Dongki¹^ORCID,Kim Seong-Kyun¹,Lee Dae Young¹

Affiliation:

1. 6G Research Team, Advanced Communications Center, Samsung Research, Samsung Electronics, Seoul, Republic of Korea

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/8920/10385034/10184126.pdf?arnumber=10184126

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. A Broadband Variable-Gain Low-Noise Amplifier With Low NF and Dual Phase Compensation;IEEE Transactions on Circuits and Systems II: Express Briefs;2024-09

2. Performance Analysis of Novel Graphene Process Low-Noise Amplifier with Multi-stage Stagger-Tuned Approach over D-band;Journal of Infrared, Millimeter, and Terahertz Waves;2024-08-24

3. Enhanced Accuracy in On-Wafer Noise Figure Measurements at Sub-Terahertz Frequencies;2024 IEEE/MTT-S International Microwave Symposium - IMS 2024;2024-06-16

4. The Evolution of Applications, Hardware Design, and Channel Modeling for Terahertz (THz) Band Communications and Sensing: Ready for 6G?;Proceedings of the IEEE;2024

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