CRAM: Collocated SRAM and DRAM With In-Memory Computing-Based Denoising and Filling for Neuromorphic Vision Sensors in 65 nm CMOS-Reference-Cited by-同舟云学术

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CRAM: Collocated SRAM and DRAM With In-Memory Computing-Based Denoising and Filling for Neuromorphic Vision Sensors in 65 nm CMOS

Published:2020-05 Issue:5 Volume:67 Page:816-820
ISSN:1549-7747
Container-title:IEEE Transactions on Circuits and Systems II: Express Briefs
language:
Short-container-title:IEEE Trans. Circuits Syst. II

Author:

Zhang Xueyong^ORCID,Mohan Vivek^ORCID,Basu Arindam^ORCID

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Link

http://xplorestaging.ieee.org/ielx7/8920/9082708/09032196.pdf?arnumber=9032196

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Evolution of Neuromorphic Computing;2024 Fourth International Conference on Advances in Electrical, Computing, Communication and Sustainable Technologies (ICAECT);2024-01-11

2. Review of neuromorphic computing based on NAND flash memory;Nanoscale Horizons;2024

3. A 915–1220 TOPS/W, 976–1301 GOPS Hybrid In-Memory Computing Based Always-On Image Processing for Neuromorphic Vision Sensors;IEEE Journal of Solid-State Circuits;2023-03

4. CryoCiM: Cryogenic compute-in-memory based on the quantum anomalous Hall effect;Applied Physics Letters;2022-04-04

5. A 51.3-TOPS/W, 134.4-GOPS In-Memory Binary Image Filtering in 65-nm CMOS;IEEE Journal of Solid-State Circuits;2022-01

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