A K-Band 5G Phased Array RX Channel With 3.3-dB NF and 28.5-dB Gain in 130-nm SiGe

Author:

Kalyoncu IlkerORCID,Burak AbdurrahmanORCID,Gurbuz YasarORCID

Funder

Scientific and Technological Research Council of Turkey

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering

Cited by 18 articles. 订阅此论文施引文献 订阅此论文施引文献,注册后可以免费订阅5篇论文的施引文献,订阅后可以查看论文全部施引文献

1. Fully Integrated Vector Modulator in 130-nm SiGe BiCMOS Technology for 5G Front-End Modules;2023 International Conference on Electrical Engineering and Photonics (EExPolytech);2023-10-19

2. Dual-Band CMOS Down-Conversion Mixer Adopting Band-Switchable Transformer;IEEE Transactions on Circuits and Systems II: Express Briefs;2023-10

3. A compact 9–23 GHz low noise amplifier with bandwidth extension techniques in 0.18‐μm SiGe BiCMOS;International Journal of Numerical Modelling: Electronic Networks, Devices and Fields;2023-06-02

4. A 17.8–20.2 GHz Compact Vector-Sum Phase Shifter in 130 nm SiGe BiCMOS Technology for LEO Gateways Receivers;Micromachines;2023-05-31

5. A Compensation and Calibration Technique for Lumped Hybrid Couplers in Integrated Image-Reject Architectures;IEEE Transactions on Circuits and Systems I: Regular Papers;2023-02

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