Impact of Forward Body-Biasing on Ultra-Low Voltage Switched-Capacitor RF Power Amplifier in 28 nm FD-SOI
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering
Link
http://xplorestaging.ieee.org/ielx7/8920/9669084/09453823.pdf?arnumber=9453823
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1. Computer-Aided Design of Cross-Voltage-Domain Energy-Optimized Tapered Buffers;IEICE Transactions on Electronics;2024-09-01
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4. A Sub-100-μW 0.1-to-27-Mb/s Pulse-Based Digital Transmitter for the Human Intranet in 28-nm FD-SOI CMOS;IEEE Journal of Solid-State Circuits;2022-05
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