Hydrogen Induced Dipole Layer in Pd-SiO2 Based Gas Sensors
Author:
Affiliation:
1. Tel Aviv University,Physical Electronics,Tel Aviv,Israel
2. University College London,Physics & Astronomy,London,UK
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9881325/9881241/09881358.pdf?arnumber=9881358
Reference23 articles.
1. Pd–thin‐SiO2–Si diode. I. Isothermal variation of H2‐induced interfacial trapping states
2. Chemical reactions on palladium surfaces studied with Pd-MOS structures
3. Adsorption-desorption phenomena during hydrogen interaction with palladium hydride
4. Photo-electric measurement of the work function of metals and its alteration after gas adsorption
5. Conduction mechanisms in Pd/SiO2/n-Si Schottky diode hydrogen detectors
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