A 19.1 - 46.5 GHz Broadband Efficient Power Amplifier in 22nm CMOS FD-SOI for mm-Wave 5G
Author:
Affiliation:
1. Texas Tech University,Dept. of Electrial Engineering,Lubbock,TX,USA
2. Texas Tech University,Noise Figure Research Inc.,Dept. of Electrial Engineering,Lubbock,TX,USA
Funder
Defense Advanced Research Projects Agency
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9937201/9937203/09937729.pdf?arnumber=9937729
Reference9 articles.
1. Effective AM-PM Cancellation with Body Bias for 5G CMOS Power Amplifier Design in 22nm FD-SOI
2. The high voltage/high power FET (HiVP)
3. A 26-42 GHz Broadband, Back-off Efficient and Vswr Tolerant CMOS Power Amplifier Architecture for 5G Applications
4. Instrument Innovations for mmWave Test,0
5. Millimeter-Wave Continuous-Mode Power Amplifier for 5G MIMO Applications
Cited by 2 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. A Ku-Band Power Amplifier in 22nm FDSOI;2024 IEEE 24th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF);2024-01-21
2. Wide Band CMOS Power Amplifier with High Flatness Using Inter-Digit Transformer and RC-Feedback;2023 IEEE Wireless and Microwave Technology Conference (WAMICON);2023-04-17
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