Resolving Unusual Gate Current and Dielectric Breakdown of Solution Processed Carbon Nanotube Thin Film Transistor
Author:
Affiliation:
1. McGill University,Electrical and Computer Engineering,Montreal,Canada
2. McGill University,Chemical Engineering,Montreal,Canada
Funder
Natural Sciences and Engineering Research Council of Canada
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx7/9937201/9937203/09937808.pdf?arnumber=9937808
Reference14 articles.
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1. Study on Transfer Characteristic Hysteresis of Carbon Nanotube Thin Film Transistor;2023 5th International Conference on Electrical Engineering and Control Technologies (CEECT);2023-12-15
2. Resolving the Unusual Gate Leakage Currents of Thin-Film Transistors with Single-Walled Carbon-Nanotube-Based Active Layers;Electronics;2022-11-13
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