The Effects of Proton Irradiation on 90 nm Strained Si CMOS on SOI Devices-Reference-Cited by-同舟云学术

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The Effects of Proton Irradiation on 90 nm Strained Si CMOS on SOI Devices

Published:2006-07 Issue: Volume: Page:
ISSN:
Container-title:2006 IEEE Radiation Effects Data Workshop
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Author:

Appaswamy Aravind,Jun Bongim,Diestelhorst Ryan,Espinel Gustavo,Prakash A.P.,Cressler John,Marshall Paul,Marshall Cheryl,Liang Qingqing,Freeman Greg,Isaacs-Smith Tamara,Williams John

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx5/4077266/4077267/04077283.pdf?arnumber=4077283

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. The impact of total ionizing dose on RF performance of 130 nm PD SOI I/O nMOSFETs;Microelectronics Reliability;2021-01

2. TCAD Simulation of Dose Radiation Effects in Sub-100-nm High-κ MOS Transistor Structures;Russian Microelectronics;2018-11

3. Bias dependence of TID radiation responses of 0.13μm partially depleted SOI NMOSFETs;Microelectronics Reliability;2013-02

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