A monolithically integrated F-band resistive InAlAs/InGaAs/InP HFET mixer
Author:
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
General Physics and Astronomy,General Engineering
Link
http://xplorestaging.ieee.org/ielx4/75/9991/00473531.pdf?arnumber=473531
Cited by 6 articles. 订阅此论文施引文献 订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献
1. Beyond 110 GHz InP-HEMT Based Mixer Module Using Flip-Chip Assembly for Precise Spectrum Analysis;IEICE Transactions on Electronics;2015
2. 93–133 GHz Band InP High-Electron-Mobility Transistor Amplifier with Gain-Enhanced Topology;Japanese Journal of Applied Physics;2013-04-01
3. A Single-Ended Resistive $X$-Band AlGaN/GaN HEMT MMIC Mixer;IEEE Transactions on Microwave Theory and Techniques;2008-10
4. Analog MMICs for millimeter-wave applications based on a commercial 0.14-μm pHEMT technology;IEEE Transactions on Microwave Theory and Techniques;2001
5. The role of background concentration in AlInAs/GaInAs/InP based double heterojunction HEMTs;Solid-State Electronics;1998-10
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