Semiconductor Excitation Sources for Bistatic Laser Monitors-Reference-Cited by-同舟云学术

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Semiconductor Excitation Sources for Bistatic Laser Monitors

Published:2022-06-30 Issue: Volume: Page:
ISSN:
Container-title:2022 IEEE 23rd International Conference of Young Professionals in Electron Devices and Materials (EDM)
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Author:

Vasnev Nikolai A.¹,Karasev Nikolai V.¹,Trigub Maxim V.¹

Affiliation:

1. Institute of Atmospheric Optics SB RAS,Laboratory of Quantum Electronics,Tomsk,Russia

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/9855012/9854868/09855167.pdf?arnumber=9855167

Reference14 articles.

1. Solid-State LTD Module Using Power MOSFETs

2. Metal vapor lasers excitation scheme [Skhema vozbuzhdenia laserov na parakh metallov];tatur,2000

3. Operational characteristics of the CuBr-lasers with the transistor switchboard;sukhanov;Bull Tomsk Polytechnic University,2008

4. Cool MOS Power Transistor SPW17N80C3;Infineon Technologies AG (INFINEON),2008

5. NPT Series N-Channel IGBT HGTG27N120BN;Semiconductor Components Industries LLC,2004

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Investigation of ASE contribution to copper bromide amplifier output signal;Optical and Quantum Electronics;2023-12-14

2. Investigation of ASE contribution to copper bromide amplifier output signal;2023-10-12

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