Impact of Back-Gate Bias and Device Geometry on the Total Ionizing Dose Response of 1-Transistor Floating Body RAMs-Reference-Cited by-同舟云学术

Impact of Back-Gate Bias and Device Geometry on the Total Ionizing Dose Response of 1-Transistor Floating Body RAMs

Published:2012-12 Issue:6 Volume:59 Page:2966-2973
ISSN:0018-9499
Container-title:IEEE Transactions on Nuclear Science
language:
Short-container-title:IEEE Trans. Nucl. Sci.

Author:

Mahatme N. N.,Zhang E. X.,Reed R. A.,Bhuva B. L.,Schrimpf R. D.,Fleetwood D. M.,Linten D.,Simoen E.,Griffoni A.,Aoulaiche M.,Jurczak M.,Groeseneken G.

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Subject

Electrical and Electronic Engineering,Nuclear Energy and Engineering,Nuclear and High Energy Physics

Link

http://xplorestaging.ieee.org/ielx5/23/6365378/06361440.pdf?arnumber=6361440

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