Toward Monolithic GaN on Si Inter-Sub-Band Infrared Optoelectronics-Reference-Cited by-同舟云学术

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Toward Monolithic GaN on Si Inter-Sub-Band Infrared Optoelectronics

Published:2024-04 Issue:4 Volume:71 Page:2497-2502
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Yokev Idan¹,Agrawal M.²,Eyadat B.¹^ORCID,Kostianovskii V.¹^ORCID,Gal L.¹^ORCID,Cohen A.¹,Kornblum L.¹^ORCID,Dharmarasu N.³^ORCID,Radhakrishnan K.²^ORCID,Orenstein M.¹^ORCID,Bahir Gad¹^ORCID

Affiliation:

1. Viterbi Faculty of Electrical and Computer Engineering, Technion–Israel Institute of Technology, Haifa, Israel

2. School of Electrical and Electronic Engineering, Nanyang Technological University, Jurong West, Singapore

3. Temasek Laboratories, Nanyang Technological University, Jurong West, Singapore

Funder

Israel Innovation Authority, Meymad/Nofar

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10482422/10458966.pdf?arnumber=10458966

Reference26 articles.

1. GaN-on-Si Power Technology: Devices and Applications

2. Prospects of III-nitride optoelectronics grown on Si

3. Batch transfer of microstructures using flip-chip solder bump bonding

4. Fabrication of indium bumps for hybrid infrared focal plane array applications

5. Wafer-to-wafer bonding for microstructure formation

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