Unraveling the Wake-Up Mechanism in Ultrathin Ferroelectric Hf0.5 Zr0.5O₂: Interfacial Layer Soft Breakdown and Physical Modeling-Reference-Cited by-同舟云学术

Unraveling the Wake-Up Mechanism in Ultrathin Ferroelectric Hf0.5 Zr0.5O₂: Interfacial Layer Soft Breakdown and Physical Modeling

Published:2024-05 Issue:5 Volume:71 Page:3365-3370
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Cho Chen-Yi¹^ORCID,Chao Tzu-Yi¹,Lin Tzu-Yao¹,Wang I-Ting¹,De Sourav¹^ORCID,Chen Yu-Sheng²,Ong Yi-Ching²,Lin Yu-De³^ORCID,Yeh Po-Chun³,Hou Tuo-Hung⁴^ORCID

Affiliation:

1. Department of Electrical Engineering and Institute of Electronics, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

2. Embedded Technology Division, Taiwan Semiconductor Manufacturing Company Ltd., Hsinchu, Taiwan

3. Industrial Technology Research Institute, Hsinchu, Taiwan

4. Department of Electrical Engineering and Institute of Electronics and Industrial Academia Innovation School, National Yang Ming Chiao Tung University, Hsinchu, Taiwan

Funder

National Science and Technology Council of Taiwan

Industrial Technology Research Institute

Taiwan Semiconductor Research Institute

Taiwan Semiconductor Manufacturing Company

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx7/16/10508280/10486870.pdf?arnumber=10486870

Reference26 articles.

1. Sub-nA Low-Current HZO Ferroelectric Tunnel Junction for High-Performance and Accurate Deep Learning Acceleration

2. Highly Reliable, Scalable, and High-Yield HfZrO_x FRAM by Barrier Layer Engineering and Post-Metal Annealing

3. Improving Edge Dead Domain and Endurance in Scaled HfZrO_x FeRAM

4. BEOL-Compatible Multiple Metal-Ferroelectric-Metal (m-MFM) FETs Designed for Low Voltage (2.5 V), High Density, and Excellent Reliability

5. Two-Transistor Metal-Ferroelectric-Metal Field- Effect Transistor (2T-MFMFET) for Scalable Embedded Nonvolatile Memory—Part I: Compact Modeling