Extraction of the Thermal Resistance and the Thermal Capacitance of GaN Power HEMTs by Using Pulsed <i>I</i>–<i>V</i> Measurements-Reference-Cited by-同舟云学术

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Extraction of the Thermal Resistance and the Thermal Capacitance of GaN Power HEMTs by Using Pulsed I–V Measurements

Published:2024-09 Issue:9 Volume:71 Page:5270-5274
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Reiner Richard¹^ORCID,Nambiar Akshay G.¹^ORCID,Basler Michael¹^ORCID,Mönch Stefan¹^ORCID,Waltereit Patrick¹^ORCID,Quay Rüdiger¹^ORCID

Affiliation:

1. Fraunhofer Institute for Applied Solid State Physics IAF, Freiburg im Breisgau, Germany

Funder

German Federal Ministry of Economics and Climate Protection (BMWK) within the Projects GaN4EmoBiL

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/10645717/10606958.pdf?arnumber=10606958

Reference21 articles.

1. Temperature measurements of semiconductor devices - a review

2. Thermal Analysis of AlGaN/GaN High-Electron Mobility Transistors Using I–V Pulsed Characterizations and Infra Red Microscopy

3. Thermal analysis of AlGaN/GaN high-electron-mobility transistors by infrared microscopy

4. A Review of Raman Thermography for Electronic and Opto-Electronic Device Measurement With Submicron Spatial and Nanosecond Temporal Resolution

5. Small-signal operation of semiconductor devices including self-heating, with application to thermal characterization and instability analysis

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