Innovative Reverse Current Coupling Layout of SiC Power Module for Parasitic Inductance Reduction-Reference-Cited by-同舟云学术

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Innovative Reverse Current Coupling Layout of SiC Power Module for Parasitic Inductance Reduction

Published:2024-09 Issue:9 Volume:71 Page:5609-5617
ISSN:0018-9383
Container-title:IEEE Transactions on Electron Devices
language:
Short-container-title:IEEE Trans. Electron Devices

Author:

Wang Ying¹^ORCID,Jiang Xi¹^ORCID,Yuan Song¹^ORCID,Ma Nianlong¹,Ouyang Runze¹,Jia Daoyong¹,Gong Xiaowu¹,Pang Zhenjiang²,Wen Lei²,Hong Haimin²,Niu Hao³^ORCID

Affiliation:

1. Key Laboratory of Ministry of Education for Wide Bandgap Semiconductor Materials and Devices, Faculty of Integrated Circuit, Xidian University, Xi’an, China

2. Shenzhen Smartchip Microelectronics Technology Company Ltd., Shenzhen, China

3. Fifth Electronics Research Institute of the Ministry of Industry and Information Technology, Guangzhou, China

Funder

Natural Science Foundation of Shaanxi Province

Publisher

Institute of Electrical and Electronics Engineers (IEEE)

Link

http://xplorestaging.ieee.org/ielx8/16/10645717/10620425.pdf?arnumber=10620425

Reference29 articles.

1. A Novel Active Gate Driver for Improving SiC MOSFET Switching Trajectory

2. A Survey of Wide Bandgap Power Semiconductor Devices

3. Fast Switching Planar Power Module With SiC MOSFETs and Ultra-low Parasitic Inductance

4. A 1200-V, 60-A SiC MOSFET Multichip Phase-Leg Module for High-Temperature, High-Frequency Applications

5. High Junction Temperature and Low Parasitic Inductance Power Module Technology for Compact Power Conversion Systems

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